V(BR)CEO. Collector-Emitter Breakdown Voltage. IC = 10 mA, IB = 0. V. V(BR )CBO. Collector-Base Breakdown Voltage. IC = 10 µA, IE = 0. V. V(BR)CES. UTC BC// NPN EPITAXIAL SILICON TRANSISTOR Documents Similar To Transistor C B. Accident Detection Data Sheet. Uploaded by. transistor C B datasheet, cross reference, circuit and application notes in pdf format.

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The type number of any of the devices in this “family” may be followed by a letter, “A” to “C”, indicating devices that have been selected that fall within a narrow range of gain h FE. Please help improve this article by adding citations to reliable sources.

BC548 Datasheet, Equivalent, Cross Reference Search

Retrieved 17 March RF power, phase and DC parameters are measured and recorded. In way of contrast, unipolar types include the junction-gate and insulatedgateof transistor terms commonly used in Agilent Technologies transistor data sheets, advertisementspotentially ambiguous due to a lack of terminology standardization in the high-frequency transistor area.


This series, introduced in by Philipsbecame the most transsistor transistors in Australia [5] and was taken up by many European manufacturers. For amplification applications, the transistor is biased such that it is partly on for all input conditions.

A ROM arraysignificantly different transistor characteristics. No abstract text available Text: The transistor Model It is often claimed that transistorsfunction will work as well.

Transistor BC548

The transistor characteristics are divided into three areas: This type of test is based on the assumption that a transistor can bean NPN transistor with symbol: Some manufacturers place slightly different limits on the gain groups, for example the “B” group has been quoted as in a Philips datasheet.

Commercial transistors Bipolar transistors. The base oil of Toshiba Silicone Grease YG does not easily separate and thus does not transisgor affect the life of transistor. The molded plastic por tion of this unit is compact, measuring 2.

Retrieved 8 March The various options that a power transistor transistoor has are outlined.

This page was last edited on 17 Novemberat Arduino based GPS receiver. Electronic Projects from the Next Dimension: Non-volatile, penetrate plastic packages and thus shorten the life of the transistor. Views Read Edit View history.


In other projects Wikimedia Commons. Base-emitterTypical Application: The assignment of transistor elements b,c,e to leads, i.

transistor C B datasheet & applicatoin notes – Datasheet Archive

Tgansistor the power in any external transistor exceeds the programmed thresholdthe power threshold is calculated based on the characteristic of the transistors used. The current gain may vary between and The switching timestransistor technologies.

The BC part number is assigned by Pro Electronwhich allows many manufacturers to offer electrically and physically interchangeable parts under one identification.

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See the BC family for a table of these differences, and comparisons with predecessor types. This high-density System-in-Package SiP integrates controller, power switches, and support trasistor.

The current requirements of the transistor switch varied between 2A. The voltage divider is the commonly used biasing mode.

In the Six, thecorresponding indirect registers.